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| MA1113-1 For PCS - 20W Power Amplifier MA1113-1 2. Electrical Performances (Tc = +25C, Vc = +25V, Vd = +10V, Vg = -6V, Zg = Zl = 50) No. Items Frequency Output Power Output RF modulation spectrum ; from the carrier 100 KHz 200 KHz 250 KHz 400 KHz 600 KHz to < 1200 KHz 1200 KHz to < 1800 KHz 1800 KHz to < 6000 KHz > = 6000 KHz Spurious ; in-band out-band Harmonics 2fo 3fo 4fo Icq Pout = +43 dBm Symbol f Pout --- Pout = +43 dBm (Pin control) --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- -60 -65 -70 --- +0.5 -30 -33 -60 -70 -73 -75 -80 -36 -30 --- --- --- 1.5 dB dB dB dB dB dB dB dB dBm dBm dBc dBc dBc A Condition Standard Min 1930 +43 Type --- --- Max 1990 --- Unit MHz dBm DESCRIPTION The MA1113-1 is a 20W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit. OUTLINE DRAWING 148 mm 142 mm 3 mm 1 2 3 MA1113-1 FEATURES sSpecified +25/+10 Volt Chracteristics * RF Output Power : +43 dBm (typ.) * Harmonics : -65 dBc typ. sSmall Size : 77 x 148 x 40 mm3 s50 Ohm Input/Output Impedances 3 mm 71 mm 77 mm 4 HOLES 3.5 mm Vg(-6V:PIN#12) GND(PIN#11) Vdet(PIN#13) (out) APPLICATION sPCS (1930 ~ 1990 MHz) Base station 40 mm 25 PINs D-SUB RF IN 10 mm Vd(+10V:PIN#24) Vc(+25V:PIN#25) RF OUT 4 5 6 Quiescent current Pin = 0mW Amplifier Specifications (MA1113-1) 1. Maximum Ratings No. 1 2 3 4 5 6 Items Case temperature Storage temperature Collector Voltage Drain Voltage Gate Voltage RF Input Power Symbol TC Tstg VC Vd Vg Pin Vg = -6V Vd = +10V Condition Standard -40 ~ +70 -40 ~ +80 +26.0 +11.5 -10.0 -9.0 Unit C C V V V dBm - 96 - - 97 - |
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